?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA25S125P rev. c0 FGA25S125P shorted anode tm igbt november 2012 absolute maximum ratings thermal characteristics notes: 1: limited by tjmax symbol description rating units v ces collector to emitter voltage 1250 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c 50 a collector current @ t c = 100 o c 25 a i cm (1) pulsed collector current 75 a i f diode continuous forward current @ t c = 25 o c 50 a diode continuous forward current @ t c = 100 o c 25 a p d maximum power dissipation @ t c = 25 o c 250 w maximum power dissipation @ t c = 100 o c 125 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case, max - 0.6 o c / w r ja thermal resistance, junction to ambient, max - 40 o c / w FGA25S125P shorted anode tm igbt features ? high speed switching ? low saturation voltage: v ce(sat) =1.8v @ i c = 25a ? high input impedance ? rohs compliant applications ? induction heating and microwave oven ? soft switching applications general description using advanced field stop trench and shorted anode technology, fairchilds shorted anode tm trench igbts offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capab ility . this device is desingned for induction heating and micro wave oven. g e c to-3pn g e c
2 www.fairchildsemi.com FGA25S125P rev. c0 FGA25S125P shorted anode tm igbt package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quant ity FGA25S125P FGA25S125P to-3pn - - 30 symbol parameter test conditions min. typ. max. units off characteristics i ces collector cut-off current v ce = 1250v, v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 25ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 25a , v ge = 15v t c = 25 o c - 1.8 2.35 v i c = 25a , v ge = 15v t c = 125 o c - 2.05 - v i c = 25a , v ge = 15v, t c = 175 o c - 2.16 - v v fm diode forward voltage i f = 25a , t c = 25 o c - 1.7 2.4 v i f = 25a , t c = 175 o c - 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 2150 - pf c oes output capacitance - 48 - pf c res reverse transfer capacitance - 36 - pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 25a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c - 24 - ns t r rise time - 250 - ns t d(off) turn-off delay time - 502 - ns t f fall time - 138 179 ns e on turn-on switching loss - 1085 - uj e off turn-off switching loss - 580 754 uj e ts total switching loss - 1665 - uj t d(on) turn-on delay time v cc = 600v, i c = 25a, r g = 10 , v ge = 15v, resistive load,, t c = 175 o c - 21.2 - ns t r rise time - 304 - ns t d(off) turn-off delay time - 490 - ns t f fall time - 232 - ns e on turn-on switching loss - 1310 - uj e off turn-off switching loss - 952 - uj e ts total switching loss - 2262 - uj q g total gate charge v ce = 600v, i c = 25a, v ge = 15v - 204 - nc q ge gate to emitter charge - 15 - nc q gc gate to collector charge - 103 - nc
3 www.fairchildsemi.com FGA25S125P rev. c0 FGA25S125P shorted anode tm igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0.0 2.0 4.0 6.0 8.0 10.0 0 40 80 120 160 200 15v 9v 10v v ge = 7v 8v 20v t c = 175 o c 17v 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 2.0 4.0 6.0 8.0 10.0 0 40 80 120 160 200 7v v ge =17v 20v 15v 12v 9v 10v 8v t c = 25 o c collector current, ic [a] collector-emitter voltage, v ce [v] 0 3 6 9 12 15 0 20 40 60 80 100 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 40 80 120 160 200 common emitter v ge = 15v t c = 25 o c t c = 175 o c --- collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 50a 25a i c = 12.5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 5 10 15 20 i c = 12.5a 25a 50a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com FGA25S125P rev. c0 FGA25S125P shorted anode tm igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance ch aracteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance gate resi stance 4 8 12 16 20 0 4 8 12 16 20 i c = 25a 12.5a 50a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 1 5 10 15 20 25 30 10 100 1000 5000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 30 60 90 120 150 180 210 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 1ms 10ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 10 20 30 40 50 60 70 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 60 70 10 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ]
5 www.fairchildsemi.com FGA25S125P rev. c0 FGA25S125P shorted anode tm igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics v s. collector current colle ctor current figure 15. switching loss vs. figure 16. switching loss vs. gate resistance collector current figure 17. turn off switching figure 18. forward characteri stics soa characteristics 10 20 30 40 50 1 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 40 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 100 1000 5000 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ ? ] 10 20 30 40 50 100 1000 10000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a] 0 1 2 3 4 0.1 1 10 100 t c = 25 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGA25S125P rev. c0 FGA25S125P shorted anode tm igbt typical performance characteristics figure 19. transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 0.06 0.1 0.7 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
7 www.fairchildsemi.com FGA25S125P rev. c0 FGA25S125P shorted anode tm igbt mechanical dimensions to-3pn dimensions in millimeters
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